ISO INTERNATIONAL STANDARD 14237 Second edition 2010-07-15 Surface chemical analysis Secondary- ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials Analyse chimique des surfaces Spectrometrie de masse des ions secondaires— Dosage des atomes de bore dans le silicium a I'aide de materiauxdopesuniformément Reference number ISO 14237:2010(E) @ISO 2010 THS unde nse from IHS Not for Resale ISO 14237:2010(E) PDF disclaimer This PDF file may contain embedded typefaces. In accordance with Adobe's licensing policy, this file may be printed or viewed but shall not be edited unless the typefaces which are embedded are licensed to and installed on the computer performing the editing. In accepts no liability in this area. Adobe is a trademark of Adobe Systems Incorporated. Details of the software products used to create this PDF file can be found in the General Info relative to the file; the PDF-creation parameters were optimized for printing. Every care has been taken to ensure that the file is suitable for use by IsO member bodies. In the unlikely event that a problem relating to it is found, please inform the Central Secretariat at the address given below. COPYRIGHT PROTECTED DOCUMENT ISO2010 All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either isO at the address below or ISO's member body in the country of the requester. ISO copyright office Case postale 56 . CH-1211 Geneva 20 Tel. + 4122 749 01 11 Fax + 41 22 749 09 47 E-mail [email protected] Web www.iso.org Published in Switzerland @ ISO 2010 - All rights reserved I without license from IHS Not for Resale ISO 14237:2010(E) Contents Page Foreword 么 Introductior 1 Scope 2 Normative references 3 Principle. 4 Reference materials ... 4.1 Primary reference material. 4.2 Secondary reference materials 5 Apparatus 6 Specimen. 7 Procedure.. 7.1 Adjustment of secondary-ion mass spectrometer 7.2 Optimizingthesecondary-ionmassspectrometersettings 7.3 Specimen introduction.... 7.4 Detected ions.. 7.5 Calibration.... 7.6 Measurement of test specimen 8 Expression of results.. 8.1 Method of calculation.. 8.2 Precision... 9 Test report Annex A (informative) Determination of carrier density in silicon wafer ..... 9 Annex B (informative) Boron isotope ratio measured by SIMS, Annex C (normative) Procedures for evaluation of apparatus performance .. 14 Annex D (informative) Statistical report on interlaboratory test programme .. 6 Bibliography.... 79 ii from IHS